產(chǎn)品簡(jiǎn)介
電阻率厚度測(cè)試儀 產(chǎn)品型號(hào):進(jìn)口 The system consists of the measuring head, an electronic rack linked by one standard cable
公司簡(jiǎn)介
北京羲和陽(yáng)光科技發(fā)展有限公司是一家新能源科技公司,致力于太陽(yáng)能光伏產(chǎn)業(yè)。提供光伏生產(chǎn)所用硅料的分選、檢驗(yàn)、檢測(cè)設(shè)備及相關(guān)設(shè)備配件,幫助您識(shí)別高質(zhì)量的硅料,減少采購(gòu)或銷(xiāo)售的風(fēng)險(xiǎn)。
我公司經(jīng)營(yíng)的主要產(chǎn)品有:硅料分選測(cè)試儀(電阻率,PN型識(shí)別)、電阻測(cè)試儀、排重?fù)綔y(cè)試儀、少子壽命測(cè)試儀、測(cè)厚儀、碳氧磷硼含量測(cè)試儀,表面線痕測(cè)試儀,光譜橢偏儀,透過(guò)率測(cè)試儀、相關(guān)產(chǎn)品配件,以及鎵摻雜劑、母合金摻雜劑,異丙醇,雙氧水等耗材。
羲和的名稱(chēng)來(lái)源于中國(guó)的太陽(yáng)神羲和女神,作為太陽(yáng)能光伏產(chǎn)業(yè)的一份子,為提高太陽(yáng)能電池生產(chǎn)過(guò)程的可控性,最大限度的減少過(guò)程風(fēng)險(xiǎn),羲和科技在不懈追求、積極探索,我們深感肩頭的重任,我們會(huì)倍加努力,持之以恒,給您提供最優(yōu)質(zhì)的產(chǎn)品、最優(yōu)惠的價(jià)格和最滿(mǎn)意的服務(wù)。
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產(chǎn)品說(shuō)明
電阻率厚度測(cè)試儀
產(chǎn)品型號(hào):進(jìn)口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connector and a PC.
功能特點(diǎn)
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from top and one from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledge and can be moved simultaneously equidistant to
the center by means of a manually moved lever.
Before and behind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer forms or misalignments. To ensure safe start and finish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement values and to
arm/disarm measurements.
技術(shù)參數(shù)
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm (1 scan only)
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm (thk.=240μm)
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
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